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MMBT3906 参数 Datasheet PDF下载

MMBT3906图片预览
型号: MMBT3906
PDF下载: 下载PDF文件 查看货源
内容描述: 30.3瓦PNP塑封装晶体管 [30.3 Watts PNP Plastic-Encapsulate Transistors]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 3 页 / 298 K
品牌: TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
 浏览型号MMBT3906的Datasheet PDF文件第2页浏览型号MMBT3906的Datasheet PDF文件第3页  
MMBT3906
Pb
RoHS
COMPLIANCE
0.3 Watts PNP Plastic-Encapsulate Transistors
SOT-23
Features
As complementary type, the NPN transistor
MMBT3904 is recommended
Epitaxial planar die construction
Marking: 2A
Dimensions in inches and (millimeters)
Maximum Ratings
Type Number
T
A
=25 C unless otherwise specified
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current - continuous
Collector Power dissipation
ELECTRICAL CHARACTERISTICS
Value
-40
-40
-5
-0.2
0.3
Units
V
V
V
A
W
Parameter
Collector-base breakdown voltage
I
C
=-10uA, I
e
=0
Collector-emitter breakdown voltage I
C
=-1mA, I
B
=0
Emitter-base breakdown voltage
I
E
=-10uA, I
C
=0
Collector cut-off current
V
CB
=-40V I
E
=0
Collector cur-off current
V
CE
=-30V V
BE
(off)=-3V
Emitter cut-off current
V
EB
=--5V I
C
=0
DC current gain
V
CE
=-1V I
C
=-10mA
V
CE
=-1V I
C
=-50mA
V
CE
=-1V I
C
=-100mA
Collector-emitter saturation voltage I
C
=-50mA, I
B
=-5mA
Base-emitter saturation voltage
I
C
=-50mA, I
B
=-5mA
Transition frequency V
CE
=-20V I
C
=-10mA f=100MHz
Delay time
V
CC
=-3V, V
BE
=-0.5V I
C
=-10mA
Rise time
I
B1
=-1.0mA
Storage time
V
CC
=-3V, I
C
=-10mA
Fall time
I
B1
=
I
B2
=-1.0mA
Operating and Storage Temperature Range
CLASSIFICATION OF
h
FE1
Symbol
V
(BR)CBO
V
(BR)CEO
V
BE(ON)
I
CBO
I
CEX
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE
(sat)
V
BE
(sat)
f
T
td
tr
ts
tf
MIN
-40
-40
-5
MAX
Units
V
V
V
uA
nA
100
60
30
-0.1
-50
-0.1
300
-0.4
-0.95
250
35
35
225
75
-55 to + 150
T
J
, T
STG
V
V
MHz
nS
nS
nS
nS
o
C
Rank
Range
O
100-200
Y
200-300
Version: A07