MMBT3904
Pb
RoHS
COMPLIANCE
0.2 Watts NPN Plastic-Encapsulate Transistors
SOT-23
Features
As complementary type, the PNP transistor
MMBT3906 is recommended
Epitaxial planar die construction
Marking: 1AM
Dimensions in inches and (millimeters)
Maximum Ratings
Type Number
T
A
=25 C unless otherwise specified
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current - continuous
Collector Power dissipation
ELECTRICAL CHARACTERISTICS
Value
60
40
6
0.2
0.2
Units
V
V
V
A
W
Parameter
Collector-base breakdown voltage
I
C
=10uA, I
e
=0
Collector-emitter breakdown voltage I
C
=1mA, I
B
=0
Emitter-base breakdown voltage
I
E
=10uA, I
C
=0
Collector cut-off current
V
CB
=60V I
E
=0
Collector cut-off current
V
CE
=30V V
BE
(off)=3V
Emitter cut-off current
V
EB
=5V I
C
=0
DC current gain
V
CE
=1V I
C
=10mA
V
CE
=1V I
C
=50mA
V
CE
=1V I
C
=100mA
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
Transition frequency V
CE
=20V I
C
=10mA f=100MHz
Delay time
V
CC
=3V V
BE
=0.5V I
C
=10mA
Rise time
I
B1
=
I
B2
=1.0mA
Storage time
V
CC
=3V I
C
=10mA
Fall time
I
B1
=
I
B2
=1.0mA
Operating and Storage Temperature Range
CLASSIFICATION OF
h
FE1
Symbol
V
(BR)CBO
V
(BR)CEO
V
BE(ON)
I
CBO
I
CEO
I
EEO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE
(sat)
V
BE
(sat)
f
T
td
tr
ts
tf
MIN
60
40
6
MAX
Units
V
V
V
uA
nA
uA
100
60
30
0.1
50
0.1
400
0.3
0.95
250
35
35
200
50
-55 to + 150
T
J
, T
STG
Y
200-300
V
V
MHz
nS
nS
nS
nS
o
C
Rank
Range
O
100-200
G
300-400
Version: A07
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