RATINGS AND CHARACTERISTIC CURVES (MBRF735 THRU MBRF7150)
FIG.1- FORWARD CURRENT DERATING CURVE
10
175
RESISTIVE OR
INDUCTIVE LOAD
8
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
AVERAGE FORWARD CURRENT. (A)
150
125
100
6
4
75
2
MBRF735-MBRF745
MBRF750-MBRF7150
0
0
50
100
o
CASE TEMPERATURE. ( C)
150
50
25
1
10
NUMBER OF CYCLES AT 60Hz
100
40
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
Pulse Width=300 s
1% Duty Cycle
FIG.4- TYPICAL REVERSE CHARACTERISTICS
MBRF735-MBRF745
MBRF750-MBRF7150
10
Tj=125 C
0
10
INSTANTANEOUS FORWARD CURRENT. (A)
MB
R
INSTANTANEOUS REVERSE CURRENT. (mA)
1
F7
50
Tj=125
0
C
1
790
RF
-71
Tj=25
0
C
1
00
MB
0.1
Tj=75
0
C
0.1
0.01
MBRF735-MBRF745
MBRF750-MBRF760
MBRF790-MBRF7150
0.01
0
0.1 0.2 0.3
0.4
0.5
0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE. (V)
0.001
0
Tj=25
0
C
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
4,000
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
100
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
1,000
TRANSIENT THERMAL IMPEDANCE. (
O
C/W)
100
JUNCTION CAPACITANCE.(pF)
10
1
100
MBRF735-MBRF745
MBRF750-MBRF760
MBRF790-MBRF7150
0.1
1.0
10
REVERSE VOLTAGE. (V)
40
0.1
0.01
0.1
1
T, PULSE DURATION. (sec)
10
100
Version: B07
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
