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LL4148_09 参数 Datasheet PDF下载

LL4148_09图片预览
型号: LL4148_09
PDF下载: 下载PDF文件 查看货源
内容描述: 500mW的高速贴片开关二极管 [500mW High Speed SMD Switching Diode]
分类和应用: 二极管开关
文件页数/大小: 2 页 / 100 K
品牌: TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
 浏览型号LL4148_09的Datasheet PDF文件第2页  
LL4148/LL4448/LL914B
500mW High Speed SMD Switching Diode
Small Signal Diode
Mini-MELF (LL34)
HERMETICALLY SEALED GLASS
C
Features
Fast switching device(T
rr
<4.0nS)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
A
B
D
Mechanical Data
Case : Mini-MELF Package (JEDEC DO-213AC)
High temperature soldering guaranteed : 270°C/10s
Polarity : Indicated by cathode band
Weight : 50.8 ± 0.5 mg
Dimensions
A
B
C
D
Unit (mm)
Min
3.30
1.40
0.25
1.25
Max
3.70
1.60
0.40
1.40
Unit (inch)
Min
Max
0.130 0.146
0.055 0.063
0.010 0.016
0.049 0.055
Ordering Information
Part No.
LLxxxx L1
LLxxxx L0
Package
Mini-MELF
Mini-MELF
Packing
2.5Kpcs / 7" Reel
10Kpcs / 13" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Surge Current
Pulse Width 8.3ms
Non-Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
P
D
V
RSM
V
RRM
I
FSM
I
FM
I
O
RθJA
T
J
, T
STG
Value
500
100
75
2.0
450
150
300
-65 to + 200
Units
mW
V
V
A
mA
mA
°C/W
°C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
LL4448, LL914B
LL4148
LL4448, LL914B
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time (Note 2)
I
F
=5.0mA
I
F
=10.0mA
I
F
=100.0mA
V
R
=20V
V
R
=75V
V
R
=0, f=1.0MHz
I
R
C
J
Trr
V
F
0.62
0.72
1.0
1.0
25
5.0
4.0
4.0
nA
μA
pF
ns
V
I
R
=100uA
I
R
=5uA
Symbol
V
(BR)
Min
100
75
Max
Units
V
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Version : D09