BAW56, BAV70, BAV99
225mW SMD Switching Diode
Small Signal Diode
SOT-23
A
F
Features
Fast switching speed, High conductance
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
D
G
B
E
Mechanical Data
Case :SOT-23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed:
Weight : 0.008gram (approximately)
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
3.00
1.40
0.50
2.00
2.55
1.20
Unit (inch)
Min
0.110
0.047
0.012
0.071
0.089
0.035
Max
0.118
0.055
0.020
0.079
0.100
0.043
0.550 REF
0.022 REF
BAW56
BAV70
BAV99
Ordering Information
Part No.
BAXXX RF
Package
SOT-23
Packing
3Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward
Surge Current
(Note 1)
Pulse Width=1 sec
Pulse Width=1
μsec
(Note 2)
Symbol
P
D
V
RRM
I
FRM
I
O
I
FSM
RθJA
T
J
, T
STG
Value
225
70
450
200
0.5
2
357
-55 to + 150
Units
mW
V
mA
mA
A
°C/W
°C
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
I
R
=
I
F
=
I
F
=
V
R
=
100μA
50mA
150mA
70V
f=1.0MHz
Symbol
V
(BR)
V
F
I
R
C
J
Trr
Min
70
-
-
-
-
-
Max
-
1.00
1.25
2.50
1.5
6.0
Units
V
V
V
μA
pF
ns
V
R
=0V,
Junction Capacitance
Reverse Recovery Time I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : D09
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
