BAS40 / -04 / -05 / -06
200mW, Low V
F,
SMD Schottky Barrier Diode
Small Signal Diode
SOT-23
A
C
F
Features
Metal-on-silicon Shcottky Barrier
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
B
E
D
G
Unit (mm)
Unit (inch)
Min
0.110
0.047
0.012
0.071
0.089
0.035
Max
0.118
0.055
0.020
0.079
0.100
0.043
Mechanical Data
Case : Flat lead SOT 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Marking Code : 43.44.45.46
Dimensions
A
B
C
D
E
F
G
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
3.00
1.40
0.50
2.00
2.55
1.20
0.550 REF
0.022 REF
BAS40
BAS40-04
BAS40-05
BAS40-06
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
(Note 2)
Symbol
P
D
V
RRM
V
R
I
FRM
I
O
I
FSM
RθJA
T
J
, T
STG
Value
200
40
40
200
200
0.6
357
-65 to + 125
Units
mW
V
V
mA
mA
A
°C/W
°C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
I
R
=
I
F
=
I
F
=
I
F
=
V
R
=
V
R
=1V,
10μA
1mA
10mA
40mA
30V
f=1.0MHz
Symbol
V
(BR)
V
F
I
R
C
J
Trr
Min
40
-
-
-
-
-
-
Max
-
0.38
0.50
1.00
0.2
5
5.0
μA
pF
ns
V
Units
V
Reverse Recovery Time I
F
=I
R
=10mA,R
L
=100Ω,I
RR
=1mA
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : D11
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
