Transys
Electronics
L I M I T E D
NPN/PNP SILICON POWER DARLINGTON TRANSISTORS
TIP122F NPN
TIP127F PNP
TO-220FP
B
CE
Designed for General-Purpose Amplifier and Low-Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VCBO
Collector -Base Voltage
VCEO
Collector -Emitter Voltage
VEBO
Emitter Base Voltage
IC
Collector Current -Continuous
ICM
Collector Current (Peak)
IB
Base Current
PD
Total Power Dissipation @ Tc=25 deg C
Derate Above 25 deg C
PD
Total Power Dissipation @ Ta=25 deg C
Derate Above 25 deg C
E
Unclamped Inductive Load Energy (1)
Tj
Junction Temperature
Tstg
Storage Temperature Range
THERMAL RESISTANCE
Rth(j-a)
From Junction to Ambient
Rth(j-c)
From Junction to Case
(1) IC=1A, L=100mH,P.R.F.=10Hz, VCC=20V, RBE=100 ohms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
VCEO (sus) * IC=100mA, IB=0
Collector Emitter (sus) Voltage
ICBO
VCB=100V, IE=0
Collector Cut off Current
ICEO
IB=O, VCE=50V
IEBO
VEB=5V,IC=0
Emitter Cut off Current
VCE(Sat)*
IC=3A, IB=12mA
Collector Emitter Saturation Voltage
IC=5A, IB=20mA
VBE(on) *
IC=3A, VCE=3V
Base Emitter on Voltage
hFE*
IC=0.5A, VCE=3V
DC Current Gain
IC=3A, VCE=3V
VALUE
100
100
5.0
5.0
8.0
120
65
0.52
2.0
0.016
50
150
-65 to +150
62.5
1.92
UNIT
V
V
V
A
A
mA
W
W/deg C
W
W/deg C
mj
deg C
deg C
deg C/W
deg C/W
MIN
100
-
-
-
-
-
-
1.0
1.0
MAX
-
0.2
0.5
2.0
2.0
4.0
2.5
-
-
UNIT
V
mA
mA
mA
V
V
V
K
K
TRSYS [ TRANSYS Electronics Limited ]
