欢迎访问ic37.com |
会员登录 免费注册
发布采购

D882 参数 Datasheet PDF下载

D882图片预览
型号: D882
PDF下载: 下载PDF文件 查看货源
内容描述: NPN型中功率晶体管 [NPN MEDIUM POWER TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 64 K
品牌: TRSYS [ TRANSYS Electronics Limited ]
   
Transys
Electronics
L I M I T E D
TO-251/252 Plastic-Encapsulated Transistors
6. 5 0¡ À. 10
0
2 . 30¡ À. 05
0
0. 5 1¡ À. 03
0
D882
FEATURES
TRANSISTOR (NPN)
14. 70
5¡ ã
5¡ ã
0. 80¡ À. 0 5
0
0. 6 0¡ À. 0 5
0
1.
Power dissipation
P
CM
:
1.25
W (Tamb=25℃)
2.
3.
BASE
2. 3 0¡ À. 05
0
2. 3 0¡ À. 0 5
0
1 . 20
0. 51 ¡ À. 03
0
123
COLLECTOR
0
0. 75¡ À. 10
6. 50¡ À. 15
0
5. 30¡ À. 10
0
0. 51¡ À. 05
0
2. 30¡ À. 10
0
7. 70
0
5. 50¡ À. 10
TO-251
TO-252-2
5. 3 0¡ À. 05
0
5¡ ã
Collector current
I
CM:
3 A
Collector-base voltage
V
(BR)CBO
:
40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE (sat)
V
BE (sat)
f
T
0
9. 70¡ À. 20
0. 51¡ À. 10
0
0¡ 0 . 10
«
5¡ ã
5¡ ã
0
1. 60¡ À. 15
2. 30¡ À. 10
0
0. 60¡ À. 10
0
2. 30¡ À. 10
0
0. 51
123
unless otherwise specified)
Test
conditions
MIN
40
30
6
1
10
1
60
32
0.5
1.5
50
V
V
MHz
400
TYP
MAX
UNIT
V
V
V
µA
µA
µA
Ic= 100
µ
A, I
E
=0
Ic= 10 mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
= 40V, I
E
=0
V
CE
= 30V, I
B
=0
V
EB
= 6V, I
C
=0
V
CE
= 2V, IC= 1A
V
CE
= 2V, I
C
= 100mA
I
C
= 2A, I
B
= 0.2 A
I
C
= 2A, I
B
= 0.2 A
V
CE
= 5V, Ic=0.1A
f =10MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
0
2. 70¡ À. 20
0¡ ¡ ã« ¡ ã
9
0. 6
0. 80¡ À. 10
0
0
5. 50¡ À. 10
EMITTER
5¡ ã
1. 20