BDX53, BDX53A, BDX53B, BDX53C
BDX54, BDX54A, BDX54B, BDX54C
Collector current
Collector current (Peak value)
Base current
Total power dissipation upto T
C
=25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
From junction to ambient
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
I
B
= 0; V
CB
= 45 V
I
B
= 0; V
CB
= 60 V
I
B
= 0; V
CB
= 80 V
I
B
= 0; V
CB
= 100 V
I
B
= 0; V
CE
= 22 V
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 40 V
I
B
= 0; V
CE
= 50 V
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 100 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 3 A; I
B
= 12 mA
D.C. current gain
I
C
= 3 A; V
CE
= 3 V
Small signal current gain
I
C
= 3 A; V
CE
= 4 V; f = 1.0 MHz
Output capacitance f = 1.0 MHz
NPN
I
E
= 0; V
CB
= 10 V
PNP
Parallel-diode forward voltage
I
F
= 3 A
I
F
= 8 A
I
C
I
CM
I
B
P
tot
T
j
T
stg
R
th j–c
R
th j–a
max.
max.
max.
max.
max.
max.
8.0
12
0.2
60
0.48
150
–65 to +150
2.08
7.0
A
A
A
W
W
/°C
°C
ºC
°C W
/
°C W
/
53
54
I
CBO
I
CBO
I
CBO
I
CBO
I
CEO
I
CEO
I
CEO
I
CEO
I
EBO
max. 0.2
max. –
max. –
max. –
max. 0.5
max. –
max. –
max. –
max.
53A 53B 53C
54A 54B 54C
–
0.2
–
–
–
0.5
–
–
–
–
0.2
–
–
–
0.5
–
–
–
–
0.2
–
–
–
0.5
mA
mA
mA
mA
mA
mA
mA
mA
mA
80
80
100
100
V
V
V
V
V
2.0
60
60
V
CEO(sus)
* min. 45
V
CBO
min. 45
V
EBO
min.
V
CEsat
*
V
BEsat
*
h
FE
*
|h
fe
|
C
o
C
o
V
F
V
F
max.
max.
min.
min.
max.
max.
max.
typ.
5.0
2.0
2.5
750
4.0
300
200
2.5
2.5
pF
pF
V
V
* Pulse test: pulse width
≤
300 µs; duty cycle
≤
2%
TRSYS [ TRANSYS Electronics Limited ]
