Transys
Electronics
L I M I T E D
SILICON ZENER DIODES
1N746 to 1N759
DO-35 400mW
Hermetically Sealed Glass Package Zener Diodes
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
ZV
3.3 to 12
V
Zener Voltage
PD
400
mW
D C Power Dissipation
3.2
mW/deg C
Derating Above 50 deg C
Tj,Tstg
-65 to +175
deg C
Operating & Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified , VF <1.5V @ 200mA
Device Nominal*
Zener
Maximum
Maximum
@
VR Maximum
Typ
Type#
Zener
Test
Zener
Reverse Current
Zener
Temp
(1)
Voltage
Current Impedance
@25 deg C
@ +150 deg C
Current
Coeff of Zener
VZ @ IZT
IZT
Zzt @ IZT
max
max
IZM
Voltage *vz
(V)
(mA)
(Ohms)
(uA)
(uA)
(V)
(mA)
(% deg C)
1N746
3.3
20
28
10
30
1.0
110
-0.066
1N747
3.6
20
24
10
30
1.0
100
-0.058
1N748
3.9
20
23
10
30
1.0
95
-0.046
1N749
4.3
20
22
2.0
30
1.0
85
-0.033
1N750
4.7
20
19
2.0
30
1.0
75
-0.015
1N751
5.1
20
17
1.0
20
1.0
70
+-0.010
1N752
5.6
20
11
1.0
20
1.0
65
+0.030
1N753
6.2
20
7
0.1
20
1.0
60
+0.049
1N754
6.8
20
5
0.1
20
1.0
55
+0.053
1N755
7.5
20
6
0.1
20
1.0
50
+0.057
1N756
8.2
20
8
0.1
20
1.0
45
+0.060
1N757
9.1
20
10
0.1
20
1.0
40
+0.061
1N758
10
20
17
0.1
20
1.0
35
+0.062
1N759
12
20
30
0.1
20
1.0
30
+0.062
Note(1) :- No Suffix +-10%
Suffix A +- 5%
* Pulse Condition : 20ms <tp 50ms, Duty Cycle<2%
TRSYS [ TRANSYS Electronics Limited ]
