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1N5352B 参数 Datasheet PDF下载

1N5352B图片预览
型号: 1N5352B
PDF下载: 下载PDF文件 查看货源
内容描述: 玻璃钝化结硅稳压二极管 [GLASS PASSIVATED JUNCTION SILICON ZENER DIODE]
分类和应用: 稳压二极管
文件页数/大小: 5 页 / 270 K
品牌: TRSYS [ TRANSYS Electronics Limited ]
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3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave
current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge
current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on
logarithmic paper. Examples of this, using the 6.8v and 200V zeners, are shown in Figure 6. Mounting
contact located as specified in Note 3. (T
A
=25
).
4. VOLTAGE REGULATION ( Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made
at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the
same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40
±
10 ms.
(T
A
=25
). Mounting contact located as specified in Note2.
5. MAXIMUM REGULATOR CURRENT (I
ZM
) - The maximum current shown is based on the maximum voltage of a
5% type unit. Therefore, it applies only to the B-suffix device. The actual I
ZM
for any device may not exceed the
value of 5 watts divided by the actual Vz of the device. T
L
=75 at maximum from the device body.
RATING AND CHARACTERISTICS CURVES
1N5348B THRU 1N5388B
TEMPERATURE COEFFICIENTS
Fig. 1-POWER TEMPERATURE DERATING CURVE
Fig. 2-TEMPERATURE COEFFICIENT RANGE
FOR UNITS 6 TO 220 VOLTS
Fig. 3-TYPICAL THERMAL RESPONSE