Advance Product Information
November 7, 2005
TGA2514-FL
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25qC, Nominal)
(Vd = 8V, Id = 2.6 A)
SYMBOL
PARAMETER
TEST
CONDITION
f = 13-16 GHz
TYPICAL
UNITS
Gain
Small Signal Gain
24
dB
IRL
Input Return Loss
f = 13-16 GHz
14
dB
ORL
Output Return Loss
f = 13-16 GHz
14
dB
Psat
Saturated Power
f = 13-16 GHz
38
dBm
TABLE III
THERMAL INFORMATION
Parameter
R
θJC
Thermal
Resistance
(channel to backside of
package)
Test Conditions
Vd = 8 V
I
D
= 2.6 A (Quiescent)
Pdiss = 20.8 W
T
CH
(
o
C)
150
R
T
JC
(
q
C/W)
3.9
T
M
(HRS)
1 E+6
Note: Package backside SnPb soldered to carrier at 70°C baseplate temperature. At
saturated output power, the DC power consumption is 28.8 W with 6.5 W RF power
delivered to the load. Power dissipated is 22.3 W and the temperature rise in the
channel is 87
°C.
The baseplate temperature must be reduced to 63°C to remain
below the 150
°C
maximum channel temperature.
3
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