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TAT2814A 参数 Datasheet PDF下载

TAT2814A图片预览
型号: TAT2814A
PDF下载: 下载PDF文件 查看货源
内容描述: DOCSIS 3.0 /边缘QAM可变增益放大器 [DOCSIS 3.0 / Edge QAM Variable Gain Amplifier]
分类和应用: 放大器
文件页数/大小: 11 页 / 720 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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TAT2814A
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Applications
Integrated DOCSIS 3.0 / Edge QAM RF Amplifier chain
Forward path 45 – 1003 MHz variable-gain applications
Product Features
Meets DOCSIS 3.0 with +4 dB typical performance
margin
< 5 Watt nominal power consumption
Low-reflection differential input/output stages
18 dB typical return loss across entire gain range
Variable gain attenuator: 18 dB typical range
30 dB typical max gain
+49 dBm typical OIP3
2.7 dB typical noise figure
Typical Input stage bias: 5 V, 290 mA
Typical Output stage bias: 8 V, 415 mA
48-pin 7x7mm QFN laminate package
General Description
The TAT2814A is an RFIC for DOCSIS 3.0 Output
Sections, such as CMTS and Edge QAM. It combines a
low-reflection differential input stage, a variable gain
step attenuator and an efficient output amplifier to
provide significant reduction in power consumption and
PC board space. It replaces circuitry requiring up to 10x
the board space and 2x the power.
The TAT2814A meets the stringent DOCSIS 3.0 output
linearity specifications with extra margin to overcome
additional losses before the output connector.
The TAT2814A is packaged in an industry standard 7x7
mm 48-pin QFN and consumes 5 W between a 5 V input
amplifier supply and an 8 V output amplifier supply. The
TAT2814A utilizes proven GaAs pHEMT to optimize
performance and cost. It allows the designer to optimize
output stage voltage to significantly reduce power
consumption in Edge QAM applications.
Functional Block Diagram
Ordering Information
Part No.
TAT2814A1L
TAT2814A1L
-EB
Description
DOCSIS 3.0 Edge QAM Variable Gain
Amplifier
(lead-free/RoHS compliant 7x7 QFN laminate Pkg)
DOCSIS 3.0 Edge QAM Variable Gain
Amplifier Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev D 05-03-12
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without noticee
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