Advance Product Datasheet
TGA4953EPU
MAXIMUM RATINGS
SYMBOL
Vd1, Vd2T
Drain Voltage
PARAMETER 6/
POSITIVE SUPPLY VOLTAGE
VALUE
8V
NOTES
POSITIVE SUPPLY CURRENT
Id1
Id2T
P
d
Vg1, Vg2
Ig1, Ig2
Vctrl1, Vctrl2
Ictrl1, Ictrl2
P
IN
V
IN
T
CH
T
STG
Drain Current
Drain Current
POWER DISSIPATION
NEGATIVE GATE
Voltage
Gate Current
CONTROL GATE
Voltage
Gate Current
RF INPUT
Sinusoidal Continuous Wave Power
10.7Gb/s PRBS Input Voltage Peak to Peak
OPERATING CHANNEL TEMPERATURE
STORAGE TEMPERATURE
23 dBm
4 Vpp
150
0
C
-40 to 125
0
C
4/ 5/
Vd/2 to –3 V
5 mA
3/
0 V to –3 V
5 mA
100 mA
300mA
4W
2/
1/
Notes:
1/
2/
3/
4/
5/
Assure the combination of Vd and Id does not exceed maximum power dissipation rating.
When operated at this bias condition with a base plate temperature of 80
0
C, the median life is reduced.
Assure Vctl1 never exceeds Vd1 and assure Vctrl2 never exceeds Vd2 during bias up and down sequences.
These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum
life, it is recommended that junction temperatures be maintained at the lowest possible levels.
6/ These ratings represent the maximum operable values for the device.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
2
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Fax (972)994 8504 Web: www.triquint.com
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