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T2G6003028-FL-EVB2 参数 Datasheet PDF下载

T2G6003028-FL-EVB2图片预览
型号: T2G6003028-FL-EVB2
PDF下载: 下载PDF文件 查看货源
内容描述: [30W, 28V DC 6 GHz, GaN RF Power Transistor]
分类和应用:
文件页数/大小: 13 页 / 1017 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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T2G6003028-FL  
30W, 28V DC – 6 GHz, GaN RF Power Transistor  
Pin Layout  
Note:  
The T2G6003028-FL will be marked with the “30282” designator and a lot code marked below the part designator. The “YY”  
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot  
start, and the “MXXX” is the production lot number.  
Pin Description  
Pin  
Symbol  
Description  
Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an  
example.  
1
VD / RF OUT  
Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an  
example.  
2
VG / RF IN  
Flange  
3
Source connected to ground; see EVB Layout on page 9 as an example.  
Notes:  
Thermal resistance measured to bottom of package  
Datasheet: Rev A 12-03-13  
Disclaimer: Subject to change without notice  
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© 2013 TriQuint  
www.triquint.com