T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Performance at 3.5 GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 150 mA
Symbol Parameter
Linear Gain
Min
Typical
16.5
Max
Units
dB
GLIN
16.0
25.0
45.5
13.0
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
28.0
W
DE3dB
G3dB
48.8
%
13.5
dB
Notes:
1. Performance at 3.5 GHz in the 2.7 to 3.5 GHz Evaluation Board
2. VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%
RF Characterization – Narrow Band Performance at 3.50 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 150 mA
Symbol Parameter
VSWR Impedance Mismatch Ruggedness
Typical
10:1
Notes:
1. VDS = 32 V, IDQ = 150 mA, CW at P1dB
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
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