T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Value
Parameter
Drain Voltage (VD)
Value
32 V (Typ.)
Breakdown Voltage (BVDG
Gate Voltage Range (VG)
Drain Current (ID)
)
100 V
-7 to 0 V
4.5 A
Drain Quiescent Current (IDQ
Peak Drain Current ( ID)
Gate Voltage (VG)
)
150 mA (Typ.)
1900 mA (Typ.)
-2.9 V (Typ.)
225 °C (Max)
28 W (Max)
46 W (Max)
Gate Current (IG)
-7.5 to 12 mA
40 W
Power Dissipation (PD)
Channel Temperature (TCH)
Power Dissipation, CW (PD)
RF Input Power, CW,
T = 25°C (PIN)
38.75 dBm
275 °C
Power Dissipation, Pulse (PD)
Channel Temperature (TCH)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Mounting Temperature
(30 Seconds)
320 °C
Storage Temperature
-40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Load Pull Performance at 1.0 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 150 mA
Symbol Parameter
Linear Gain
Min
Typical
21.6
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
27.0
W
DE3dB
PAE3dB
G3dB
51.0
%
50.0
%
Gain at 3 dB Compression
18.6
dB
Notes:
1. VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%
RF Characterization – Load Pull Performance at 3.5 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 150 mA
Symbol Parameter
Linear Gain
Min
Typical
17.7
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
31.0
W
DE3dB
PAE3dB
G3dB
59.7
%
57.6
%
Gain at 3 dB Compression
14.7
dB
Notes:
1. VDS = 32 V, IDQ = 150 mA; Pulse: 100µs, 20%
Datasheet: Rev - 12-30-13
Disclaimer: Subject to change without notice
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