T1P2701012-SP
10 W, 12V, 500 MHz—3GHz, Powerband
TM
pHEMT RF Power Transistor
Introduction
The T1P2701012-SP is a POWERBAND discrete pHEMT,
depletion mode, RF Power transistor designed to operate from
500MHz to 3GHz in wide-band circuits. The device has an in-
stantaneous band-width P1dB output power of 10watts across
the entire band when operated in the TriQuint wide-band test
fi
xture. The T1P2701012-SP can also be used in narrow band ap-
plications and is rated at 15Watts P1dB at 3GHz.
Figure 1. Available Packages
TM
Table 1. Maximum Ratings
Sym
V+
V-
l+
PD
TCH
Parameter
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Power Dissipation
Operating Channel Temperature
Value
12.5 V
–5V to 0V
5.6A
70 mA
See note 3
150
o
C
2/ 3/
4/
2/
Notes
2/
| lG | Gate Supply Current
1/ These ratings represent the maximum operable values for this
device.
2/ Combinations of supply voltage, supply current, input power,
and output power shall not exceed PD.
3/ For a median life
ti
me of 1E+6 hrs, Power dissipation is limited
to: PD(max) = (150 °C – TBASE °C) / 8.3 (°C/W)
4/ Junction operating temperature will directly affect the device
median
ti
me to failure(TM). For maximum life, it is recom-
mended that junction temperatures be maintained at the lowest
possible levels.
Table 2. Thermal Information
Parameter
Test Conditions
TCH
(°C)
145
θJC
(°C/W)
8.3
TM
(HRS)
1.6E+6
θ
JC Thermal Resis- Vd = 10 V
tance (channel to
Idq = 900 mA
backside of carrier) Pdiss = 9 W
Features
— Exceptional Instantaneous band-width performance from
500MHz – 3GHz
— Increased efficiency results in significant advantages
— Smaller and lighter systems
— Reduced system component costs
— Reduced energy consumption
— Typical Performance ratings
— Wide-Band 500MHz-3GHz
(as tested in TriQuint Wideband Fixture)
— 10dB gain
— 50% Efficiency
— 10Watt P1dB
— Narrow Band up to 3GHz
— 12dB gain
— 60% efficiency
— 15Watt P1dB
Preliminary Data Sheet
Subject to Change
www.triquint.com/powerband
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
