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T1G6003028-FL 参数 Datasheet PDF下载

T1G6003028-FL图片预览
型号: T1G6003028-FL
PDF下载: 下载PDF文件 查看货源
内容描述: [30W, 28V, DC 6 GHz, GaN RF Power Transistor]
分类和应用:
文件页数/大小: 13 页 / 1245 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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T1G6003028-FL  
30W, 28V, DC – 6 GHz, GaN RF Power Transistor  
Application Circuit  
Bias-up Procedure  
Vg set to -5.0V  
Bias-down Procedure  
Turn off RF signal  
Turn off Vd and wait 1 second to allow drain  
capacitor dissipation  
Vd set to 28 V  
Adjust Vg more positive until quiescent Id is 200 mA.  
This will be ~ Vg = -3.6 V typical  
Apply RF signal  
Turn off Vg  
Data Sheet: Rev - 10/16/2012  
- 8 of 13 -  
Disclaimer: Subject to change without notice  
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© 2012 TriQuint Semiconductor, Inc.