T1G6001032-SM
10W, 32V, DC – 6 GHz, GaN RF Power Transistor
Pin Layout
Note:
The T1G6001032-SM will be marked with the “1032” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot
start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.
Pin Description
Pin
Symbol
Description
18, 19, 20, 21,
22, 23
Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an
example.
VD / RF OUT
Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an
example.
2, 3, 4, 5, 6, 7 VG / RF IN
33
Flange
Source connected to ground; see EVB Layout on page 9 as an example.
Notes:
Thermal resistance measured to bottom of package
Datasheet: Rev A 05-24-13
Disclaimer: Subject to change without notice
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