T1G6001032-SM
10W, 32V, DC – 6 GHz, GaN RF Power Transistor
RF Characterization – Performance at 3.0 GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 50 mA
Symbol Parameter
Linear Gain
Min
17.0
9.0
Typical
19.0
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
10.0
W
DE3dB
PAE3dB
G3dB
51.0
50.0
14.0
55.0
%
54.0
%
Gain at 3 dB Compression
16.0
dB
Notes:
1. Performance at 3.0 GHz in the 2.7 to 3.1 GHz Evaluation Board
2. VDS = 32 V, IDQ = 50 mA; Pulse: 100µs, 20%
RF Characterization – Narrow Band Performance at 3.50 GHz (1)
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 50 mA
Symbol Parameter
VSWR Impedance Mismatch Ruggedness
Typical
10:1
Notes:
1. VDS = 32 V, IDQ = 50 mA, CW at P1dB
Datasheet: Rev A 05-24-13
Disclaimer: Subject to change without notice
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