T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Narrow Band Performance at 2.9 GHz(1,2,3)
Test conditions unless otherwise noted: TA = 25 °C, VD = 36 V, IDQ = 520 mA (combined), Pulsed
Symbol Parameter
Typical
VSWR Impedance Mismatch Ruggedness
10:1
Notes:
1. Performance at 2.9 GHz in the 2.9 to 3.3 GHz Evaluation Board
2. Pulse: 100µs, 20%
3. Tested input power established at P3dB at power match condition
RF Characterization – Performance at 2.9 GHz (1, 2)
Test conditions unless otherwise noted: TA = 25 °C, VD = 36 V, IDQ = 520 mA (combined)
Symbol Parameter
Linear Gain
Min
Typical
16.1
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
260.0
52.0
W
DE3dB
G3dB
%
13.1
dB
Notes:
1. Performance at 2.9 GHz in the 2.9 to 3.3 GHz Evaluation Board
2. Pulse: 100µs, 20%
Datasheet: Rev B 11-24-14
Disclaimer: Subject to change without notice
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