T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Typical Performance(1,2)
T1G4020036 Gain and PAE vs. Pout
T1G4020036 Gain and PAE vs. Pout
2.7GHz; Vds = 36V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
2.7GHz; Vds = 36V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
20
60
55
50
45
40
35
30
25
20
15
10
20
19
18
17
16
15
14
13
12
11
10
70
65
60
55
50
45
40
35
30
25
20
19
Zs = 7.27-j5.11Ω
18
17
16
15
14
13
12
11
10
Zl = 2.50-j2.05Ω
Zs = 7.27-j5.11Ω
Zl = 2.36-j0.65Ω
39 40 41 42 43 44 45 46 47 48 49 50 51 52
Pout [dBm]
40 41 42 43 44 45 46 47 48 49 50 51
Pout [dBm]
T1G4020036 Gain and PAE vs. Pout
T1G4020036 Gain and PAE vs. Pout
2.9GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
2.9GHz; Vds= 36V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
20
19
18
17
16
15
14
13
12
11
10
60
55
50
45
40
35
30
25
20
15
10
20
70
19
18
17
16
15
14
13
12
11
10
65
60
55
50
45
40
35
30
25
20
Zs = 12.1-j9.87Ω
Zl = 2.84-j3.11Ω
Zs = 12.1-j9.87Ω
Zl = 2.09-j1.37Ω
39 40 41 42 43 44 45 46 47 48 49 50 51 52
Pout [dBm]
40 41 42 43 44 45 46 47 48 49 50 51
Pout [dBm]
1. Only half of the device was tested. Impedances were presented at device reference planes.
2. Drive-up condition: Vds = 36V, Idq = 260mA, Pulsed: 100uS pulse width, 20% duty cycle
Datasheet: Rev B 11-24-14
Disclaimer: Subject to change without notice
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