T1G4004532-FL
45W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: VDS = 32 V, IDQ = 220 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
3. Reference plane is at the device package leads
Datasheet: RevA
Disclaimer: Subject to change without notice
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