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T1G4003532-FL-EVB1 参数 Datasheet PDF下载

T1G4003532-FL-EVB1图片预览
型号: T1G4003532-FL-EVB1
PDF下载: 下载PDF文件 查看货源
内容描述: [35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor]
分类和应用:
文件页数/大小: 13 页 / 1306 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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T1G4003532-FL  
35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor  
Mechanical Information  
Package Information and Dimensions  
All dimensions are in millimeters.  
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both  
lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering  
processes.  
Data Sheet: Rev A 10/18/2012  
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Disclaimer: Subject to change without notice  
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© 2012 TriQuint Semiconductor, Inc.