T1G2028536-FS
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Evaluation Board Performance (1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: VDS = 36 V, IDQ = 576 mA
2. Test Signal: Pulse Width = 300 µs, Duty Cycle = 10 %
Application Circuit
Bias-up Procedure
Bias-down Procedure
Set gate voltage (VG) to -5.0V
Set drain voltage (VD) to 36 V
Slowly increase VG until quiescent ID is 576 mA.
Apply RF signal
Turn off RF signal
Turn off VD and wait 1 second to allow drain capacitor
dissipation
Turn off VG
Datasheet: Rev A 10-17-13
Disclaimer: Subject to change without notice
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