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T1G2028536-FS 参数 Datasheet PDF下载

T1G2028536-FS图片预览
型号: T1G2028536-FS
PDF下载: 下载PDF文件 查看货源
内容描述: [285W, 36V DC – 2 GHz, GaN RF Power Transistor]
分类和应用:
文件页数/大小: 13 页 / 980 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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T1G2028536-FS  
285W, 36V DC – 2 GHz, GaN RF Power Transistor  
Pin Layout  
Note:  
The T1G2028536-FS will be marked with the “T1G2028536-FS” designator and a lot code marked below the part designator.  
The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the  
assembly lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.  
Pin Description  
Pin  
Symbol  
Description  
Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an  
example.  
1
VD / RF OUT  
Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an  
example.  
2
VG / RF IN  
Flange  
3
Source connected to ground; see EVB Layout on page 9 as an example.  
Notes:  
Thermal resistance measured to bottom of package  
Datasheet: Rev A 10-17-13  
Disclaimer: Subject to change without notice  
- 10 of 13 -  
© 2013 TriQuint  
www.triquint.com