QPD2195
400ꢀW, 48ꢀV, 1.8-2.2 GHz GaN RF Power Transistor
Recommended Operating
Absolute Maximum Ratings
Parameter
Valueꢀ/ꢀRange
−67 to 67 mA
+55ꢀV
Parameter
Operating Temperature −40
Min Typ Max Units
Gate Current (IG)
Drain Voltage (VD)
Peak RF Input Power
–
−2.8
48
–
°C
Gate Voltageꢀ(VG)
Drain Voltageꢀ(VD)
Quiescent Currentꢀ(IDQ
–
–
–
–
–
V
44ꢀdBm
–
V
VSWR Mismatch, P1dB Pulse (10ꢀ%
duty cycle, 100ꢀµ width), T = 25ꢀ°C
)
720
–
–
mA
°C
10:1
TCHꢀforꢀ>106ꢀhours MTTF
250
Storage Temperature
−65 to +150°C
Electrical performance is measured under conditions noted in
the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
Operation of this device outside the parameter ranges given above
may cause permanent damage.
RF Characterization
Parameter
Frequency Range
Quiescent Current
Linear Gain
Conditions
Min
1805
Typ
−
Max
2170
Units
MHz
mA
−
−
−
−
720
20.4
56.3
70.1
−
−
−
−
dB
P3dB
dBm
Drain Efficiency
P3dB
%
Test conditions unless otherwise noted: VD = +48ꢀV, IDQ = 720ꢀmA, T = 25°C, Pulsed CW (10% duty cycle, 100 µs width) on Class AB
single-ended EVB at 1880 MHz
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Rev. A
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