QPD2194
300ꢀW, 48ꢀV, 1.8-2.2 GHz GaN RF Power Transistor
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Carrier Amplifier Thermal Resistance
at Average Power (θJC)
TCASE = 85°C, TCH = 152°C,
CW: PDISS = 60ꢀW, POUT = 90ꢀW
1.12
°C/W
Notes:
1. Thermal resistance measured to package backside.
2. Based on expected carrier amplifier efficiency of Doherty.
3. POUT assumes 20% peaking amplifier contribution of total average Doherty rated power.
Median Lifetime
Median Lifetime vs. Channel Temperature
1E+19
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
25
50
75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)
- 3 of 14 -
Rev. A
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