QPD2194
300ꢀW, 48ꢀV, 1.8-2.2 GHz GaN RF Power Transistor
Single-Ended Evaluation Board Performance Plots
Gain vs. Output Power
Drain Efficiency vs. Output Power
22
21
20
19
18
17
16
15
14
13
12
70
60
50
40
30
20
10
0
VG = −2.869 V, VD = +48 V, IDQ = 600 mA
Pulsed CW: 10% Duty Cycle, 100 µs Width
VG = −2.869 V, VD = +48 V, IDQ = 600 mA
Temp. = +25°C
Temp. = +25°C
Pulsed CW: 10% Duty Cycle, 100 µs Width
1800 MHz
2110 MHz
1840 MHz
2140 MHz
1880 MHz
1800 MHz
2110 MHz
1840 MHz
2140 MHz
1880 MHz
2170 MHz
2170 MHz
40
42
44
46
48
50
52
54
56
40
42
44
46
48
50
52
54
56
Output Power (dBm)
Output Power (dBm)
Gain vs. Average Output Power
Drain Efficiency vs. Average Output Power
22
21
20
19
18
17
16
15
14
13
12
11
10
50
45
40
35
30
25
20
15
10
5
VD = +48 V, IDQ = 600 mA
20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
VD = +48 V, IDQ = 600 mA
Temp. = +25°C
Temp. = +25°C
20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
1800 MHz
1930 MHz
2110 MHz
1840 MHz
1960 MHz
2140 MHz
1880 MHz
1990 MHz
2170 MHz
1800 MHz
1930 MHz
2110 MHz
1840 MHz
1960 MHz
2140 MHz
1880 MHz
1990 MHz
2170 MHz
0
30 32 34 36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
30 32 34 36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Peak Power vs. Average Output Power
ACPR vs. Average Output Power
58
56
54
52
50
48
46
44
42
40
38
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
VD = +48 V, IDQ = 600 mA
VD = +48 V, IDQ = 600 mA
Temp. = +25°C
Temp. = +25°C
20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
20 MHz LTE, PAR = 7.8 dB @ 0.01% CCDF
1800 MHz
1930 MHz
2110 MHz
1840 MHz
1960 MHz
2140 MHz
1880 MHz
1990 MHz
2170 MHz
1800 MHz
1930 MHz
2110 MHz
1840 MHz
1960 MHz
2140 MHz
1880 MHz
1990 MHz
2170 MHz
30 32 34 36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
30 32 34 36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Test conditions unless otherwise noted: VD = +48ꢀV, IDQ = 600ꢀmA, T = 25°C, on Class AB single-ended EVB
- 5 of 14 -
Rev. A
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