QPD1025
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Thermal and Reliability Information – CW 1, 2, 3
Parameter
Conditions
Values Units
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
°C/W
°C
Hrs
°C
°C/W
°C
Hrs
°C
°C/W
°C
0.26
131.3
4.0E10
117 (2)
0.29
188.1
1.0E8
154 (2)
0.33
85 °C Case
Pdiss = 172.8 W
CW
(1)
(1)
(1)
)
)
)
Peak Channel Temperature, IR (2)
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
85 °C Case
Pdiss = 345.6 W
CW
Peak Channel Temperature, IR (2)
Thermal Resistance, FEA (θJC) (1) (3)
Peak Channel Temperature, FEA (TCH
Median Lifetime, FEA (TM) (1)
85 °C Case
Pdiss = 518.4 W
CW
259.5
4.0E5
195 (2)
Hrs
°C
Peak Channel Temperature, IR (2)
Notes:
1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability.
Unless otherwise noted, all thermal references are FEA.
2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability.
3. Thermal resistance measured to backside of package.
Datasheet Rev. B │ Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
