QPD1025L
1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor
Median Lifetime 1, 2
Median Lifetime vs. Channel Temperature
1.00E+19
1.00E+18
1.00E+17
1.00E+16
1.00E+15
1.00E+14
1.00E+13
1.00E+12
1.00E+11
1.00E+10
1.00E+09
1.00E+08
1.00E+07
1.00E+06
1.00E+05
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature, TCH (°C)
Notes:
1. Test Conditions: VD = +50ꢀV; Failure Criteria = 10ꢀ% reduction in ID_MAX during DC Life Testing.
2. For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle.
Datasheet Rev. B │ Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
