QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Pulsed Characterization – Load Pull Performance – Power Tuned1
Parameters
Frequency, F
Linear Gain, GLIN
Typical Values
Unit
GHz
dB
2
3
4
6
9
10
24.0
21.9
19.7
16.1
12.2
10.7
Output Power at 3dB
40.4
40.0
40.3
40.4
40.0
39.9
dBm
compression point, P3dB
Power-Added-Efficiency at 3dB
compression point, PAE3dB
Gain at 3dB compression point
Notes:
58.0
21.0
52.8
18.9
57.0
16.7
54.5
13.1
45.0
9.2
40.0
7.7
%
dB
1. Test conditions unless otherwise noted: VD = +32ꢁV, IDQ = 50ꢁmA, Temp = +25ꢁ°C
Pulsed Characterization – Load Pull Performance – Efficiency Tuned1
Parameters
Frequency
Typical Values
Unit
GHz
dB
2
3
4
6
9
10
Linear Gain, GLIN
25.6
23.4
21.3
16.9
12.9
11.9
Output Power at 3dB
compression point, P3dB
Power-Added-Efficiency at 3dB
compression point, PAE3dB
Gain at 3dB compression point,
G3dB
36.8
68.8
22.6
39.0
66.
38.3
69.4
18.3
39.4
61.2
13.9
39.4
50.3
9.9
38.7
46.3
8.9
dBm
%
20.4
dB
Notes:
1- Test conditions unless otherwise noted: VD = +32ꢁV, IDQ = 50ꢁmA, Temp = +25ꢁ°C
RF Characterization – 3.1 – 3.5 GHz EVB Performance At 3.3 GHz1
Parameter
Linear Gain, GLIN
Min
Typ
16.3
39.9
58.7
13.3
Max
Units
ꢁdB
–
–
–
–
–
–
–
–
Output Power at 3dB compression point, P3dB
Drain Efficiency at 3dB compression point, DEFF3dB
dBm
%
Gain at 3dB compression point, G3dB
Notes:
dB
1. VD = +32ꢁV, IDQ = 50ꢁmA, Temp = +25ꢁ°C, Pulse Width = 100 us, Duty Cycle = 20%
RF Characterization – Mismatch Ruggedness at 3.3 GHz1,2
Symbol Parameter
dB Compression
Typical
VSWR
Notes:
Impedance Mismatch Ruggedness
3
ꢁ10:1
1. Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 50 mA
2. Driving input power is determined at pulsed compression under matched condition at EVB output connector.
Rev. A
Disclaimer: Subject to change without notice
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