QPD1014
15W, 50V, 30 – 1200 MHz, GaN RF Input-Matched Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 50 V, IDQ = 25 mA, Temp = +25 °C.
2. See page 16 for load pull and source pull reference planes.
1200 MHz, Load-pull
Zs(1fo) = 43.73-2.64i
Zs(2fo) = 9.07-14.79i
Zl(2fo) = 21.88+50.91i
Max Power is 42.3dBm
at Z = 53.139+26.325i
= 0.2935+0.2149i
Max Gain3 is 19.9dB
at Z = 21.315+67.976i
= 0.52+0.5963i
Max PAE is 70.4%
at Z = 69.276+73.619i
19.3
4
= 0.5703+0.3081i
18.8
18.3
17.8
70.1
68.1
66.1
64.1
62.1
17.3
42.3
42.1
41.9
41.7
41.5
Power
Gain
PAE
Zo = 33.4
3dB Compression Referenced to Peak Gain
Rev. A
Disclaimer: Subject to change without notice
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