QPB1500
Ku-Band 25 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θJC) (1)
Test Conditions
Value
2.38
Units
°C/W
CW, VD = +28ꢀV, IDQ = 450ꢀmA,
TBASE = 85ꢀ°C PDISS = 12.8ꢀW
Channel Temperature (TCH) (Quiescent)
Median Lifetime (TM)
115
5.58E+11
2.13
°C
Hrs
°C/W
°C
Thermal Resistance (θJC) (1)
VD = +28ꢀV, IDQ = 450ꢀmA, TBASE = 85ꢀ°C,
Freq = 15.15ꢀGHz, PIN = 20ꢀdBm, POUT
Channel Temperature (TCH) (under RF drive)
173
=
42.9ꢀdBm, PDISS = 41.4ꢀW, ID_Drive = 2.17ꢀA
Median Lifetime (TM)
Notes:
1. Thermal resistance measured to back of package.
7.76E+08
Hrs
Median Lifetime
Life Test Conditions: VD = 28ꢀV; Failure Criteria = 10ꢀ% reduction in ID_MAX during DC Life Testing
Maximum Gate Current vs. TCH
PDISS vs. Frequency vs. Base Temperature
120
110
100
90
80
70
60
50
40
30
20
10
0
60
55
50
45
40
35
30
25
20
15
PIN = 14 dBm
PIN = 20 dBm
PIN = 25 dBm
-40 C
+25 C
+85 C
14.25 14.50 14.75 15.00 15.25 15.50 15.75 16.00 16.25
Frequency (GHz)
125 135 145 155 165 175 185 195 205 215 225
Channel Temperature (°C)
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Data Sheet Rev. A, June 26, 2017
www.qorvo.com
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
