QPA2735
13.75 –ꢀ18ꢀGHz GaAs Low Noise Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Drain Voltage (VD)
Value
5.0 V
Parameter
Drain Voltage
Value
3.5 V
Drain Current (quiescent, IDQ
Gate Voltage (typical)
)
105 mA
Drain Current (ID1/ID2/ID3)
Gate Voltage Range
90/144/192 mA
0 to −1.5 V
5.0/5.0/6.6 mA
20 dBm
−0.46 V
−40 to 85ꢀ°C
Operating Temperature Range
Gate Current (IG1/IG2/IG3 at 125 °C)
RF Input Power (50 Ω, 85 °C)
Channel Temperature, TCH
Mounting Temperature (30 seconds)
Storage Temperature
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
175 °C
260 °C
−55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Test conditions, unless otherwise noted: 25 °C, VD = 3.5 V, IDQ = 105 mA. Data de-embedded to device reference plane.
Parameter
Frequency
Min
13.75
Typical
Max
18
Units
GHz
dB
Small Signal Gain
26
1.1
Noise Figure
dB
1-dB Compression Point
Input Return Loss
18
dBm
dB
11
Output Return Loss
14
dB
3RD Order Intermodulation level (Pout=0 dBm/tone)
Output TOI (Pout=0 dBm/tone)
Gain Temperature Coefficient
−58
29
dBc
dBm
dB/°C
−0.013
Data Sheet Rev. A, June 12 10, 2017 | Subject to change without notice
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