QPA1001
3.1ꢀ–ꢀ3.5 GHz 60 Watt GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
0.69
Units
°C/W
°C
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (Under RF drive)
Median Lifetime (TM)
Tbase = 85°C, VD = 30 V, IDQ = 200 mA, Freq = 3.32
GHz, ID_Drive = 4.46 A, PIN = 26 dBm, POUT = 48.6 dBm,
PDISS = 61.6 W, PW = 100 us, DC = 10%
132
1.50E10
0.96
Hrs
Thermal Resistance (θJC) (1)
Channel Temperature (TCH) (Under RF drive)
Median Lifetime (TM)
°C/W
°C
Tbase = 85°C, VD = 30 V, IDQ = 200 mA, Freq = 3.32
GHz, ID_Drive = 4.31 A, PIN = 26 dBm, POUT = 48.4 dBm,
PDISS = 60.5 W, PW = 300 us, DC = 20%
150
1.75E09
Hrs
Notes:
1. Thermal resistance measured to back of package.
Median Lifetime
Test Conditions: VD = +40ꢀV; Failure Criteria = 10ꢀ% reduction in ID_MAX during DC Life Testing
Median Lifetime vs. TCH
Dissipated Power vs. Freq. vs. VD
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
80
PIN = 25 dBm
75
70
65
60
55
50
45
40
28V 100us 85C
30V 100us 85C
30V 300us 85C
32V 100us 85C
35
30
FET13
25
50
75 100 125 150 175 200 225 250 275
Channel Temperature (°C)
3.0
3.1
3.2
3.3
Frequency (GHz)
3.4
3.5
3.6
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Data Sheet Rev. A, September 25, 2017
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