Package 20275
120 Watts, 2110-2170 MHz
PUSH/PULL LATERAL MOSFET
Description
The PD21120R6 is a 120–watt, internally matched LDMOS
FET in-
tended for WCDMA applications from 2110 to 2170 MHz. This device typi-
cally operates at 48% efficiency (P-1dB) and 14 dB linear gain. Full gold
metallization ensures excellent device lifetime and reliability.
PD21120R6
Key Features
•
•
INTERNALLY MATCHED
Typical WCDMA Performance at 28 V
- Average Output Power = 20 W atts
- Gain = 14 dB
- Efficiency = 22%
(channel bandwidth 3.84 MHz,
adjacent channels ±5 MHz,
peak/avg 8.5:1 at 0.01% CCD)
Typical CW Performance at 28 V
- Output Power at P1-dB = 120 W atts
- Gain = 13 dB
- Efficiency = 48%
Full Gold Metallization
Integrated ESD Protection; Class 1
(minimum) Human Body Model
Excellent Thermal Stability
Broadband Internal Matching
Low HCI Drift
Capable of Handling 10:1 VSWR @ 28 V ,
120 Watts (CW) Output Power
Typi cal Singl e Carrier WCDMA Perfor mance
-35
-40
Efficiency
Gain
25
20
15
10
ACPR
V
DD
= 28 V
I
DQ
= 1.45 A
f = 2170 MHz
15
20
25
5
0
-45
-50
-55
-60
0
5
10
Output Pow er (Watts )
Guaranteed Performance
WCDMA Measurements
(in test fixture)
V
DD
= 28 V, I
DQ
= 1.45 A, P
OUT
= 20 W AVG
f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels ± 5 MHz, Peak to Avg 8.5:1
Characteristic
Adjacent Channel Power Ratio
Gain
Drain Efficiency
Gain (dB) & Efficiency (%)
ACPR (dBc )x
Symbol
ACPR
G
ps
ı
D
Min
—
13
19
Typ
-45
14.5
22
Max
-40
—
—
Units
dB
dB
%
Two-Tone Measurements
(in test fixture)
V
DD
= 28 V, I
DQ
= 1.20 A, P
OUT
= 120 W PEP, f = 2170 MHz, Tone Spacing = 100 kHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
ı
D
IMD
Min
12.5
31
-27
Typ
14
36
-30
Max
—
—
—
Units
dB
%
dBc
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