AH420
Frequency (MHz)
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACPR
P1dB
Output IP3
At 27dBm/tone, 1MHz spacing
4W High Linearity InGaP HBT Amplifier
920-960 MHz Reference Design (AH420-EPCB900)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25°C
920
940 960 Units
+27 +27 +27 dBm
15.9
16
16.1
dB
17
14
11
dB
5.3
6.4
8.0
dB
-47 -46.5 -46.5 dBc
+35.2 +35.2 +35.2 dBm
+51
6.5
+50
6.6
800
+5
C7
C8
+49
6.7
dBm
dB
mA
V
Noise Figure
Quiescent Current, Icq
Vpd, Vcc
D1
FB1
C22
R3
C3
C5
C4
C6
C2
C1
R1
C14
C17
C13
C15
C12
Notes:
1.
The primary RF microstrip line is 50
Ω.
2.
Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1.
3.
Components shown on the silkscreen but not on the schematic are not used.
4.
Vpd used for device power down (low=RF off)
5.
The edge of C13 is placed at 75mil from AH420 RFout pin. (3.9
o
@ 940 MHz)
6.
The edge of C15 is placed 145mil from the edge of C13. (7.5
o
@ 940 MHz)
7.
The edge of C14 is placed at 150mil from AH420 Rfin pin. (7.7
o
@ 940 MHz)
8.
The edge of C17 is placed against the edge of C14.
9.
0
Ω
jumpers can be replaced with copper trace in target application.
Return Loss
0
-5
T=25°C
Gain vs. Frequency
18
T=25°C
R2
R4
L1
OIP3 vs. Output Power/Tone vs. Temperature
f=940 MHz
55
17
50
OIP3 (dBm)
S11, S22 (dB)
Gain (dB)
-10
-15
-20
16
45
15
40
S11
S22
+25°C
-40°C
+85°C
14
0.90
0.92
0.94
0.96
0.98
-25
0.90
35
0.92
0.94
Frequency (GHz)
T=25°C
0.96
0.98
20
22
Frequency (GHz)
ACPR vs. Output Average Power vs. Frequency
T=25°C
24
26
Output Power (dBm)
28
30
OIP3 vs. Output Power/Tone vs. Frequency
52
P1dB vs. Frequency vs. Temperature
37
-35
-40
ACPR (dBc)
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
OIP3 (dBm)
50
36
48
-50
-55
-60
920 MHz
940 MHz
960 MHz
P1dB (dBm)
-45
35
46
34
44
920 MHz
42
940 MHz
960 MHz
29
30
+25°C
33
920
930
-40°C
940
Frequency (MHz)
T=25°C
+85°C
950
960
-65
15
16
17
18
19
20
21
22
Output Power (dBm)
T=25°C
23
24
25
24
25
26
27
28
Output Power (dBm)
Current vs Output Average Power vs. Frequency
1100
Collector Current (mA)
8
Noise Figure vs. Frequency
T=25°C
Efficiency vs Output Average Power vs. Frequency
20
Collector Efficiency (%)
1050
1000
950
900
920 MHz
850
24
25
26
27
28
Output Power (dBm)
29
30
940 MHz
960 MHz
7
15
NF (dB)
6
10
5
5
920 MHz
940 MHz
960 MHz
29
30
4
0.90
0
0.92
0.94
0.96
0.98
24
25
Frequency (GHz)
26
27
28
Output Power (dBm)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 4 of 8 Aug 2009
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