AH420
Frequency (GHz)
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
P1dB
Output IP3
At 27dBm/tone, 1MHz spacing
4W High Linearity InGaP HBT Amplifier
2110-2170 MHz Reference Design (AH420-EPCB2140)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25°C
2110 2140 2170 Units
+26 +26 +26 dBm
13.3
14
14
dB
14
12
10
dB
5
7.4
9
dB
-50
-49
-50
dBc
+35.8 +35.7 +35.2 dBm
+49
5.8
+50
5.6
800
+5
C7
C8
+50
5.5
dBm
dB
mA
V
Noise Figure
Quiescent Current, Icq
Vpd, Vcc
D1
FB1
R3
C3
C5
C4
C6
C2
C1
R1
C14
C13
C15
C12
C16
C17
Notes:
1.
The primary RF microstrip line is 50
Ω.
2.
Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1.
3.
Components shown on the silkscreen but not on the schematic are not used.
4.
Vpd used for device power down (low=RF off)
5.
The edge of C13 is placed at 65mil from AH420 RFout pin. (7.6
o
@ 2140 MHz)
6.
The edge of C15 is placed 60mil from the edge of C13. (7.0
o
@ 2140 MHz)
7.
The edge of C16 is placed 340mil from the edge of C15. (39.9
o
@ 2140 MHz)
8.
The edge of C14 is placed at 155mil from AH420 RFin pin. (18.2
o
@ 2140 MHz)
9.
The edge of C17 is placed 205mil from the edge of C14. (24.0
o
@ 2140 MHz)
10. 0
Ω
jumpers can be replaced with copper trace in target application.
Gain vs. Frequency
15
14
T=25°C
S11, S22 (dB)
ACLR (dBc)
R2
R4
C20
C22
C21
L1
Return Loss
0
-5
-10
-15
-20
T=25°C
ACLR vs. Output Average Power vs. Frequency
-35
-40
-45
-50
-55
T=25°C
Gain (dB)
13
12
11
10
2.10
S11
2.12
2.14
2.16
2.18
2.20
S22
-60
2.20
2110 MHz
24
25
2140 MHz
2170 MHz
28
29
-25
2.10
2.12
Frequency (GHz)
ACLR vs. Output Average Power vs. Temperature
-40
-45
55
2.14
2.16
Frequency (GHz)
2.18
26
27
Output Power (dBm)
f=2140 MHz
OIP3 vs. Output Power / tone vs. Frequency
OIP3 vs. Output Power/Tone vs. Temperature
55
50
50
OIP3 (dBm)
ACLR (dBc)
-50
-55
-60
OIP3 (dBm)
45
45
40
40
+25°C
-65
23
24
-40°C
+85°C
35
2140 MHz
28
20
22
2110 MHz
2170 MHz
35
30
+25°C
-40°C
+85°C
25
26
Output Power (dBm)
27
24
26
28
Output Power / tone (dBm)
T=25°C
20
22
24
26
Output Power (dBm)
Noise Figure vs. Frequency
T=25°C
28
30
P1dB vs. Frequency vs. Temperature
38
Current vs Output Average Power vs. Frequency
1050
Collector Current (mA)
8
37
P1dB (dBm)
1000
950
900
850
2110 MHz
800
2140 MHz
2170 MHz
28
29
7
NF (dB)
36
6
35
5
+25°C
34
2.10
2.12
-40°C
2.14
2.16
Frequency (GHz)
+85°C
2.18
2.20
24
25
26
27
Output Power (dBm)
4
2.10
2.12
2.14
2.16
2.18
2.20
Frequency (GHz)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 7 of 8 Aug 2009
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