AH225
1W High Linearity InGaP HBT Amplifier
Reference Design 1805-1880 MHz
C7
C17
D3
C12
C1
J4
J3
C15
L1
R2
C10
U1
C6
C3
C11
L5 C9
J5
Notes:
1. See PC Board Layout, page 20 for more information.
2. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 ꢀ and R8 = no connect.
3. The primary RF microstrip characteristic line impedance is 50 ꢀ.
4. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
5. Components shown on the silkscreen but not on the schematic are not used.
6. The edge of C9 is placed at 10 mils from the edge of AH225 RFin pin pad (0.5° at 1840 MHz).
7. The edge of L2 is placed against the edge of L5.
8. The edge of C6 is placed at 80 mils from the edge of AH225 RFout pin pad (8° at 1840 MHz).
9. The edge of C5 is placed against the edge of C6.
10. Zero ohm jumpers may be replaced with copper traces in the target application layout.
11. DNP means Do Not Place.
12. Inductor L3 on Vpd line is critical for linearity performance.
13. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device.
14. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10.
15. All components are of 0603 size unless stated otherwise.
Typical Performance 1805-1880 MHz
Frequency
Gain
MHz
dB
dB
1805
15.1
12
1840
15.1
11
1880
15.1
10
Input Return Loss
Output Return Loss
Output P1dB
dB
9.5
10.7
+30.7
+46
12
+30.6
+45
dBm
dBm
dBm
dBm
dB
+30.8
+46.2
+21.7
+23.6
5.7
Output IP3 at 19 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power at -50 dBc ACLR [1]
OFDMA Channel Power at 2.5% EVM [2]
Noise Figure
+21.6
+23.5
5.7
+21.4
+23.3
5.8
Supply Voltage, Vcc
Quiescent Collector Current, Icq
V
mA
+5
300
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
2. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev F 05/17/12
Disclaimer: Subject to change without notice
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