AGR26180EF
180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
May 2004
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
300
Drain-source Breakdown Voltage (V
GS
= 0, I
D
=
400
µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 600 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 2 x 850 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Input Return Loss*
C
RSS
—
4.0
—
pF
Symbol
Min
Typ
Max
Unit
V
(BR)DSS
I
GSS
I
DSS
G
FS
65
—
—
—
2.8
3.0
—
—
—
—
12
3.4
3.7
0.08
—
6
200
18
—
4.0
4.6
—
Vdc
µAdc
µAdc
S
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
On Characteristics
V
GS(TH)
V
GS(Q)
V
DS(ON)
Functional Tests
(in Supplied Test Fixture)
(in Agere Systems Supplied Test Fixture)
G
PS
η
IM3
ACPR
IRL
—
—
12.5
–36
–40
–12
20
—
—
dB
dBc
dBc
dB
W
%
—
—
—
—
—
—
Output Mismatch Stress
(V
DD
= 28 V, P
OUT
= 180 W (pulsed 4 µs at 10% duty),
I
DQ
= 2 x 850 mA, f
C
= 2655.0 MHz VSWR = 10:1; [all phase angles])
Power Output, 1 dB Compression Point, pulsed 4 µs at 10% duty.
(V
DD
= 28 V, f
C
= 2655.0 MHz, pulsed 6 µs at 10% duty)
P
1dB
ψ
—
185
—
No degradation in output
power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2645.0 MHz, and f2 = 2655 MHz. V
DD
= 28 Vdc, I
DQ
= 2 x 850 mA, and
P
OUT
= 27 W average. Nominal operating voltage 28 Vdc.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
