AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
100
Drain-source Breakdown Voltage (V
GS
= 0, I
D
=
300
µA)
V
(BR)DSS
I
GSS
I
DSS
G
FS
65
—
—
—
—
—
—
6.4
3
150
9
—
—
µAdc
µAdc
S
Vdc
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 300 µA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 800 mA)
V
GS(TH)
V
DS(ON)
V
GS(Q)
2.8
3.0
—
3.4
3.7
4.8
4.6
—
Vdc
Vdc
Vdc
0.11
Table 5. RF Characteristics
Parameter
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Common-source Amplifier Power Gain*
Symbol
Dynamic Characteristics
C
RSS
—
2.1
—
pF
Min
Typ
Max
Unit
Functional Tests (in
Supplied Test Fixture)
Agere Systems Supplied Test Fixture)
Drain Efficiency*
G
PS
η
IM3
ACPR
IRL
14.0
24
—
14.5
–33
–36
–12
93
26
—
—
dB
dBc
dBc
dB
W
%
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
–32
–35
–9
—
—
—
Input Return Loss*
Power Output, 1 dB Compression Point
(V
DD
= 28 V, f
C
= 2140.0 MHz)
P
1dB
ψ
85
Output Mismatch Stress
(V
DD
= 28 V, P
OUT
= 90 W (CW), I
DQ
= 800 mA, f
C
= 2140.0 MHz
VSWR = 10:1; [all phase angles])
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz.
V
DD
= 28 Vdc, I
DQ
= 800 mA, and P
OUT
= 19 W average.
Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc ±0.5 V.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
