Data Sheet
AGR21045EF
45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
20.00
18.00
16.00
14.00
GAIN (dB)Z
12.00
10.00
8.00
6.00
4.00
2.00
0.00
2100
IMD3
ACPR
2110
2120
2130
2140
2150
2160
2170
GAIN
2 CARRIER W-CDMA 3GPP,
PEAK TO AVERAGE = 8.5 dB @ 0.01% CCDF
10 MHz SPACING, 3.84 MHz CBW,
P
OUT
= 10 W, V
DD
= 28 V, I
DQ
= 400 mA
RL
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
-45.0
-50.0
2180
FREQUENCY (MHz)Z
Figure 8. Broadband Performance
+5
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
CENTER 2.140 GHz
F1
F2
2 CARRIER W-CDMA
3GPP
PEAK-TO-AVG = 8.5 dB
@ 0.01% CCDF
10 MHz SPACING
3.84 MHz CBW
P
OUT
= 10 W
V
DD
= 28 V
I
DQ
= 400 mA
IMD3
IMD3
ACPR
ACPR
SPAN 50 MHz
Figure 9. Spectral Plot
EFF (%), RL (dB), IMD3 (dBc), ACPR (dBc)Z
EFFICIENCY
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
