AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
(continued)
55
50
-30
-35
(%), EVM (%)
Z
45
40
35
30
25
20
15
10
5
0
0
10
EVM
20
400 kHz
600 kHz
G
PS
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
30
P
OUT
(W) Avg.Z
40
50
60
Test Conditions:
V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. P
OUT
55
50
-30
-40
-45
-50
600 kHz
G
PS
-55
-60
-65
-70
-75
EVM
0
10
20
30
P
OUT
(W) Avg.Z
Test Conditions:
V
DD
= 28 Vdc, I
DQ
= 500 mA, f = 1960 MHz, modulation = GSM/EDGE.
(%), EVM (%)
Z
45
40
35
30
25
20
15
10
5
0
400 kHz
-80
40
50
60
-85
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. P
OUT
SPECTRAL TREGROWTH (dBc)Z
-35
G
PS
(dB),
SPECTRAL REGROWTH (dBc)
G
PS
(dB),
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
