AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
(continued)
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. RF Characteristics
Parameter
Dynamic Characteristics
C
RSS
—
1.3
—
pF
Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1 MHz)
(Part is internally matched both on input and output.)
Functional Tests (in
Supplied Test Fixture)
Agere Systems Supplied Test Fixture)
G
PS
14.5 15.5
—
dB
Common-source Amplifier Power Gain
(V
DD
= 28 Vdc, P
OUT
= 12 W average, 2-Carrier N-CDMA, I
DQ
= 700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Drain Efficiency
η
—
23.5
—
%
(V
DD
= 28 Vdc, P
OUT
= 12 W average, 2-Carrier N-CDMA, I
DQ
= 700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Third-order Intermodulation Distortion
IM3
—
–36
— dBc
(V
DD
= 28 Vdc, P
OUT
= 12 W average, 2-Carrier N-CDMA, I
DQ
= 700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
IM3 measured in a 1.2288 MHz integration BW centered at f1 – 2.5 MHz
and f2 + 2.5 MHz, referenced to the carrier channel power)
ACPR
— –50.5 — dBc
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
OUT
= 12 W average, 2-Carrier N-CDMA, I
DQ
= 700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 1.2288 MHz integration BW centered at
f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
IRL
—
–12
—
dB
Input Return Loss
(V
DD
= 28 Vdc, P
OUT
= 12 W average, 2-Carrier N-CDMA, I
DQ
= 700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Output Power at 1 dB Gain Compression
P1dB
60
70
—
W
(V
DD
= 28 V, P
OUT
= 60 W CW, f = 1990 MHz, I
DQ
= 500 mA)
Ruggedness
Ψ
No degradation in output
(V
DD
= 28 V, P
OUT
= 60 W CW, I
DQ
= 350 mA, f = 1930 MHz,
power.
VSWR = 10:1 [all phase angles])
Symbol
Min
Typ
Max Unit
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
