AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics
(continued)
-20.0
THIRD ORDER INTERMODULATIONZ
DISTORTION (IMD3) (dBc)Z
-25.0
-30.0
-35.0
-40.0
-45.0
-50.0
-55.0
-60.0
1.0
I
DQ
= 500 mA
I
DQ
= 650 mA
I
DQ
= 1100 mA
I
DQ
= 950 mA
I
DQ
= 800 mA
10.0
OUTPUT POWER (P
OUT
) (WPEP)Z
100.0
V
DD
= 26 V, fc = 1842.5 MHz, Two Tone Measurement, 100 kHz Spacing
Figure 8. Intermodulation Distortion vs. Output Power
Gps, POWER GAIN (dB) DRAIN EFFICIENCY (%)Z
45
40
35
30
25
20
15
10
5
0
1.0
10.0
600 kHz
Gps
400 kHz
EFFICIENCY
0
SPECTRAL REGROWTH (dBc)Z
-10
-20
-30
-40
-50
-60
-70
-80
-90
100.0
OUTPUT POWER (P
OUT
) (W)Z
V
DD
= 26 V, I
DQ
= 800 mA, fc = 1842.5 MHz, EDGE Modulation
Figure 9. Power Gain, Efficiency, and Spectral Regrowth vs. Output Power