AGR 18060 E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
= 300µA
Drain-source Breakdown Voltage (V
GS
= 0 V, I
D
= 90 µA)
Symbol
Off Characteristics
V
(BR)DSS
I
GSS
I
DSS
G
FS
Min
65
—
—
—
—
—
—
Typ
—
Max
—
Un i t
Vdc
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 26 V, V
GS
= 0 V)
—
—
Forward Transconductance (V
DS
= 10 V, I
D
= 0.45 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 180 µA)
Gate Quiescent Voltage (V
DS
= 26 V, I
D
= 500 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 0.45 A)
Table 5. RF Characteristics
Parameter
On Characteristics
5.5
100
—
—
—
1.8
µAdc
µAdc
S
V
GS(th)
V
DS(on)
V
GS(Q)
4.0
3.6
—
4.8
Vdc
Vdc
Vdc
0.08
Symbol
Dynamic Characteristics
Min
Typ
1.3
Max
—
Un i t
pF
Two-Tone Common-source Amplifier Power Gain
(V
DD
= 26 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
Two-Tone Drain Efficiency
(V
DD
= 26 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
Third-order Intermodulation Distortion*
(V
DD
= 26 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
Input Return Loss
(V
DD
= 26 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
C
RSS
—
Transfer Capacitance
(V
DS
= 26 V, V
GS
= 0, f = 1 MHz)
(Part is internally matched both on input and output.)
(in
Agere Systems Supplied Test Fixture)
Functional Tests (in
Supplied Test Fixture)
G
PS
—
15
41
–26
–10
60
—
—
—
—
—
dB
%
dBc
dB
W
η
IM3
IRL
P
1dB
Ψ
—
—
—
—
Ruggedness
(V
DD
= 26 V, P
OUT
= 60 W CW, I
DQ
= 500 mA, f = 1880 MHz,
VSWR = 10:1 [all phase angles])
Output Power at 1 dB Gain Compression
(V
DD
= 26 V, P
OUT
= 60 W CW, f = 1880 MHz, I
DQ
= 500 mA)
No degradation in output
power.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
