AGR18045E
45 W , 1.805 GHz— 1.880 GHz, LDMOS RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
Min
Typ Max
Unit
Off Characteristics
=200
Drain-source Breakdown Voltage (VGS = 0 V, ID = 38 µA)
V(BR)DSS
IGSS
65
—
—
—
—
—
—
Vdc
µAdc
µAdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
1.5
75
4
Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V)
IDSS
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.4 A)
Gate Threshold Voltage (VDS = 10 V, ID = 150 µA)
Gate Quiescent Voltage (VDS = 26 V, ID = 400 mA)
Drain-source On-voltage (VGS = 10 V, ID = 0.5 A)
GFS
—
—
3.2
—
—
4.8
—
S
VGS(TH)
VGS(Q)
VDS(ON)
Vdc
Vdc
Vdc
3.8
—
—
0.22
—
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ Max
Unit
Dynamic Characteristics
Drain-to-gate Capacitance
(VDS = 26 V, VGS = 0 V, f = 1 MHz)
CRSS
COSS
—
—
1.0
24
—
—
pF
pF
Drain-to-source Capacitance
(VDS = 26 V, VGS = 0 V, f = 1 MHz)
(in Supplied Test Fixture)
Functional Tests* (in Agere Systems Supplied Test Fixture)
Power Gain
(VDS = 26 V, POUT = 15 W, IDQ = 400 mA)
GL
—
15
32
—
—
dB
%
Drain Efficiency
η
—
(VDS = 26 V, POUT = 15 W, IDQ = 400 mA)
EDGE Linearity Characterization
(POUT = 15 W, f = 1.840 GHz, VDS = 26 V, IDQ = 400 mA)
Modulation spectrum @ ±400 kHz
Modulation spectrum @ ±600 kHz
—
—
—
–63
–73
49
—
—
—
dBc
dBc
W
Output Power
P1dB
(VDS = 26 V, 1 dB gain compression, IDQ = 400 mA)
Input Return Loss
IRL
—
–12
—
dB
Ruggedness
(VDS = 26 V, POUT = 45 W, IDQ = 400 mA,
VSWR = 10:1 [all angles])
ψ
No degradation in output
power.
* Across full DCS band, 1.805 GHz—1.880 GHz.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
