POWER GAIN (P
G
) (dB)Z
18
17.5
17
16.5
16
15.5
15
14.5
14
920
925
930
935
940
945
950
955
R
L
P
G
@ P
OUT
= 130 W
-4
-6
-8
-10
-12
-14
-16
-18
-20
960
FREQUENCY (MHz)Z
V
DD
= 26 V, I
DQ
= 1.0 A, T
F
= 30 °C.
Figure 5. Power Gain and Return Loss vs. Frequency
INPUT RETURN LOSS (R
L
) (dB)Z
Draft Copy Only
AGR09130E
130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
200
180
POWER OUT (P
OUT
) (W)Z
940 MHz
960 MHz
P
OUT
920 MHz
200
180
DRAIN EFFICIENCY (Eff) (%)Z
160
140
120
100
80
60
40
20
0
0.00
0.50
160
140
120
100
80
60
P
IN
960 MHz
920 MHz
940 MHz
40
20
0
4.00
1.00
1.50
2.00
2.50
3.00
3.50
INPUT POWER (P
IN
) (W)Z
V
DD
= 26 V, I
DQ
= 1.0 A, T
F
= 30 °C, FORMAT = CW.
Figure 4. P
OUT
and Drain Efficiency vs. P
IN
19
18.5
P
G
@ P
OUT
= 50 W
0
-2
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
